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document no. e1058e10 (ver. 1.0) date published august 2007 (k) japan printed in japan url: http://www.elpida.com ? elpida memory, inc. 2007 preliminary data sheet 1gb unbuffered ddr2 sdram dimm ebe10ue8acfa (128m words 64 bits, 1 rank) specifications ? density: 1gb ? organization ? 128m words 64 bits, 1 rank ? mounting 8 pieces of 1g bits ddr2 sdram sealed in fbga ? package: 240-pin socket type dual in line memory module (dimm) ? pcb height: 30.0mm ? lead pitch: 1.0mm ? lead-free (rohs compliant) ? power supply: vdd = 1.8v 0.1v ? data rate: 800m bps/667mbps (max.) ? eight internal banks for concurrent operation (components) ? interface: sstl_18 ? burst lengths (bl): 4, 8 ? /cas latency (cl): 3, 4, 5, 6 ? precharge: auto precharge option for each burst access ? refresh: auto-refresh, self-refresh ? refresh cycles: 8192 cycles/64ms ? average refresh period 7.8 s at 0 c tc + 85 c 3.9 s at + 85 c < tc + 95 c ? operating case temperature range ? tc = 0 c to +95 c features ? double-data-rate architecture; two data transfers per clock cycle ? the high-speed data transfer is realized by the 4 bits prefetch pipelined architecture ? bi-directional differential data strobe (dqs and /dqs) is transmitted/received with data for capturing data at the receiver ? dqs is edge-aligned with data for reads; center- aligned with data for writes ? differential clock inputs (ck and /ck) ? dll aligns dq and dqs transitions with ck transitions ? commands entered on each positive ck edge; data and data mask referenced to both edges of dqs ? data mask (dm) for write data ? posted /cas by programmable additive latency for better command and data bus efficiency ? off-chip-driver impedance ad justment and on-die- termination for better signal quality ? /dqs can be disabled for single-ended data strobe operation
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 2 ordering information part number data rate mbps (max.) component jedec speed bin (cl-trcd-trp) package contact pad mounted devices EBE10UE8ACFA-8E-E 800 ddr2-800 (5-5-5) ede1108acse-8e-e ebe10ue8acfa-8g-e ddr2-800 (6-6-6) ede1108acse-8e-e ebe10ue8acfa-6e-e 667 ddr2-667 (5-5-5) 240-pin dimm (lead-free) gold ede1108acse-8e-e ede1108acse-6e-e pin configurations 1 pin front side back side 64 pin 65 pin 120 pin 121 pin 184 pin 185 pin 240 pin pin no. pin name pin no. pin name pin no. pin name pin no. pin name 1 vref 61 a4 121 vss 181 vdd 2 vss 62 vdd 122 dq4 182 a3 3 dq0 63 a2 123 dq5 183 a1 4 dq1 64 vdd 124 vss 184 vdd 5 vss 65 vss 125 dm0 185 ck0 6 /dqs0 66 vss 126 nc 186 /ck0 7 dqs0 67 vdd 127 vss 187 vdd 8 vss 68 nc 128 dq6 188 a0 9 dq2 69 vdd 129 dq7 189 vdd 10 dq3 70 a10 130 vss 190 ba1 11 vss 71 ba0 131 dq12 191 vdd 12 dq8 72 vdd 132 dq13 192 /ras 13 dq9 73 /we 133 vss 193 /cs0 14 vss 74 /cas 134 dm1 194 vdd 15 /dqs1 75 vdd 135 nc 195 odt0 16 dqs1 76 nc 136 vss 196 a13 17 vss 77 nc 137 ck1 197 vdd 18 nc 78 vdd 138 /ck1 198 vss 19 nc 79 vss 139 vss 199 dq36 20 vss 80 dq32 140 dq14 200 dq37 21 dq10 81 dq33 141 dq15 201 vss 22 dq11 82 vss 142 vss 202 dm4 23 vss 83 /dqs4 143 dq20 203 nc 24 dq16 84 dqs4 144 dq21 204 vss 25 dq17 85 vss 145 vss 205 dq38 26 vss 86 dq34 146 dm2 206 dq39 27 /dqs2 87 dq35 147 nc 207 vss
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 3 pin no. pin name pin no. pin name pin no. pin name pin no. pin name 28 dqs2 88 vss 148 vss 208 dq44 29 vss 89 dq40 149 dq22 209 dq45 30 dq18 90 dq41 150 dq23 210 vss 31 dq19 91 vss 151 vss 211 dm5 32 vss 92 /dqs5 152 dq28 212 nc 33 dq24 93 dqs5 153 dq29 213 vss 34 dq25 94 vss 154 vss 214 dq46 35 vss 95 dq42 155 dm3 215 dq47 36 /dqs3 96 dq43 156 nc 216 vss 37 dqs3 97 vss 157 vss 217 dq52 38 vss 98 dq48 158 dq30 218 dq53 39 dq26 99 dq49 159 dq31 219 vss 40 dq27 100 vss 160 vss 220 ck2 41 vss 101 sa2 161 nc 221 /ck2 42 nc 102 nc 162 nc 222 vss 43 nc 103 vss 163 vss 223 dm6 44 vss 104 /dqs6 164 nc 224 nc 45 nc 105 dqs6 165 nc 225 vss 46 nc 106 vss 166 vss 226 dq54 47 vss 107 dq50 167 nc 227 dq55 48 nc 108 dq51 168 nc 228 vss 49 nc 109 vss 169 vss 229 dq60 50 vss 110 dq56 170 vdd 230 dq61 51 vdd 111 dq57 171 nc 231 vss 52 cke0 112 vss 172 vdd 232 dm7 53 vdd 113 /dqs7 173 nc 233 nc 54 ba2 114 dqs7 174 nc 234 vss 55 nc 115 vss 175 vdd 235 dq62 56 vdd 116 dq58 176 a12 236 dq63 57 a11 117 dq59 177 a9 237 vss 58 a7 118 vss 178 vdd 238 vddspd 59 vdd 119 sda 179 a8 239 sa0 60 a5 120 scl 180 a6 240 sa1
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 4 pin description pin name function a0 to a13 address input row address a0 to a13 column address a0 to a9 a10 (ap) auto precharge ba0, ba1, ba2 bank select address dq0 to dq63 data input/output /ras row address strobe command /cas column address strobe command /we write enable /cs0 chip select cke0 clock enable ck0 to ck2 clock input /ck0 to /ck2 differential clock input dqs0 to dqs7, /dqs0 to /dqs7 input and output data strobe dm0 to dm7 input mask scl clock input for serial pd sda data input/output for serial pd sa0 to sa2 serial address input vdd power for internal circuit vddspd power for serial eeprom vref input reference voltage vss ground odt0 odt control nc no connection
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 5 serial pd matrix byte no. function described bit7 bit6 bit5 bi t4 bit3 bit2 bit1 bit0 hex value comments 0 number of bytes utilized by module manufacturer 1 0 0 0 0 0 0 0 80h 128 bytes 1 total number of bytes in serial pd device 0 0 0 0 1 0 0 0 08h 256 bytes 2 memory type 0 0 0 0 1 0 0 0 08h ddr2 sdram 3 number of row address 0 0 0 0 1 1 1 0 0eh 14 4 number of column address 0 0 0 0 1 0 1 0 0ah 10 5 number of dimm ranks 0 1 1 0 0 0 0 0 60h 1 6 module data width 0 1 0 0 0 0 0 0 40h 64 7 module data width continuation 0 0 0 0 0 0 0 0 00h 0 8 voltage interface level of this assembly 0 0 0 0 0 1 0 1 05h sstl 1.8v 9 ddr sdram cycle time, cl = x -8e (cl = 5) 0 0 1 0 0 1 0 1 25h 2.5ns* 1 -8g (cl = 6) 0 0 1 0 0 1 0 1 25h 2.5ns* 1 -6e (cl = 5) 0 0 1 1 0 0 0 0 30h 3.0ns* 1 10 sdram access from clock (tac) -8e, -8g 0 1 0 0 0 0 0 0 40h 0.4ns* 1 -6e 0 1 0 0 0 1 0 1 45h 0.45ns* 1 11 dimm configuration type 0 0 0 0 0 0 0 0 00h none 12 refresh rate/type 1 0 0 0 0 0 1 0 82h 7.8 s 13 primary sdram width 0 0 0 0 1 0 0 0 08h 8 14 error checking sdram width 0 0 0 0 0 0 0 0 00h none 15 reserved 0 0 0 0 0 0 0 0 00h 0 16 sdram device attributes: burst length supported 0 0 0 0 1 1 0 0 0ch 4,8 17 sdram device attributes: number of banks on sdram device 0 0 0 0 1 0 0 0 08h 8 18 sdram device attributes: /cas latency -8e, -6e 0 0 1 1 1 0 0 0 38h 3, 4, 5 -8g 0 1 1 1 0 0 0 0 70h 4, 5, 6 19 dimm mechanical characteristics 0 0 0 0 0 0 0 1 01h 4.00mm max. 20 dimm type information 0 0 0 0 0 0 1 0 02h unbuffered 21 sdram module attributes 0 0 0 0 0 0 0 0 00h normal 22 sdram device attributes: general 0 0 0 0 0 0 1 1 03h weak driver 50 odt support 23 minimum clock cycle time at cl = x ? 1 -8e, -6e (cl = 4) 0 0 1 1 1 1 0 1 3dh 3.75ns* 1 -8g (cl = 5) 0 0 1 1 0 0 0 0 30h 3.0ns* 1 24 maximum data access time (tac) from clock at cl = x ? 1 -8e, -6e (cl = 4) 0 1 0 1 0 0 0 0 50h 0.5ns* 1 -8g (cl = 5) 0 1 0 0 0 1 0 1 45h 0.45ns* 1 25 minimum clock cycle time at cl = x ? 2 -8e, -6e (cl = 3) 0 1 0 1 0 0 0 0 50h 5.0ns* 1 -8g (cl = 4) 0 0 1 1 1 1 0 1 3dh 3.75ns* 1
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 6 byte no. function described bit7 bit6 bit5 bi t4 bit3 bit2 bit1 bit0 hex value comments 26 maximum data access time (tac) from clock at cl = x ? 2 -8e, -6e (cl = 3) 0 1 1 0 0 0 0 0 60h 0.6ns* 1 -8g (cl = 4) 0 1 0 1 0 0 0 0 50h 0.5ns* 1 27 minimum row precharge time (trp) -8e 0 0 1 1 0 0 1 0 32h 12.5ns -8g, -6e 0 0 1 1 1 1 0 0 3ch 15ns 28 minimum row active to row active delay (trrd) 0 0 0 1 1 1 1 0 1eh 7.5ns 29 minimum /ras to /cas delay (trcd) -8e 0 0 1 1 0 0 1 0 32h 12.5ns -8g, -6e 0 0 1 1 1 1 0 0 3ch 15ns 30 minimum active to precharge time (tras) 0 0 1 0 1 1 0 1 2dh 45ns 31 module rank density 0 0 0 0 0 0 0 1 01h 1g bytes 32 address and command setup time before clock (tis) -8e, -8g 0 0 0 1 0 1 1 1 17h 0.17ns* 1 -6e 0 0 1 0 0 0 0 0 20h 0.20ns* 1 33 address and command hold time after clock (tih) -8e, -8g 0 0 1 0 0 1 0 1 25h 0.25ns* 1 -6e 0 0 1 0 0 1 1 1 27h 0.27ns* 1 34 data input setup time before clock (tds) -8e, -8g 0 0 0 0 0 1 0 1 05h 0.05ns* 1 -6e 0 0 0 1 0 0 0 0 10h 0.10ns* 1 35 data input hold time after clock (tdh) -8e, -8g 0 0 0 1 0 0 1 0 12h 0.12ns* 1 -6e 0 0 0 1 0 1 1 1 17h 0.17ns* 1 36 write recovery time (twr) 0 0 1 1 1 1 0 0 3ch 15ns* 1 37 internal write to read command delay (twtr) 0 0 0 1 1 1 1 0 1eh 7.5ns* 1 38 internal read to precharge command delay (trtp) 0 0 0 1 1 1 1 0 1eh 7.5ns* 1 39 memory analysis probe characteristics 0 0 0 0 0 0 0 0 00h tbd 40 extension of byte 41 and 42 -8e 0 0 1 1 0 1 1 0 36h -8g, -6e 0 0 0 0 0 1 1 0 06h 41 active command period (trc) -8e 0 0 1 1 1 0 0 1 39h 57.5ns* 1 -8g, -6e 0 0 1 1 1 1 0 0 3ch 60ns* 1 42 auto refresh to active/ auto refresh command cycle (trfc) 0 1 1 1 1 1 1 1 7fh 127.5ns* 1 43 sdram tck cycle max. (tck max.) 1 0 0 0 0 0 0 0 80h 8ns* 1 44 dout to dqs skew -8e, -8g 0 0 0 1 0 1 0 0 14h 0.20ns* 1 -6e 0 0 0 1 1 0 0 0 18h 0.24ns* 1 45 data hold skew (tqhs) -8e, -8g 0 0 0 1 1 1 1 0 1eh 0.30ns* 1 -6e 0 0 1 0 0 0 1 0 22h 0.34ns* 1 46 pll relock time 0 0 0 0 0 0 0 0 00h undefined
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 7 byte no. function described bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 hex value comments 47 to 61 0 0 0 0 0 0 0 0 00h 62 spd revision 0 0 0 1 0 0 1 0 12h rev. 1.2 63 checksum for bytes 0 to 62 -8e 1 1 1 1 1 0 0 0 f8h -8g 1 1 1 1 0 1 0 1 dch -6e 0 0 0 1 0 0 1 0 12h 64 to 65 manufacturer?s jedec id code 0 1 1 1 1 1 1 1 7fh continuation code 66 manufacturer?s jedec id code 1 1 1 1 1 1 1 0 feh elpida memory 67 to 71 manufacturer?s jedec id code 0 0 0 0 0 0 0 0 00h 72 manufacturing location (ascii-8bit code) 73 module part number 0 1 0 0 0 1 0 1 45h e 74 module part number 0 1 0 0 0 0 1 0 42h b 75 module part number 0 1 0 0 0 1 0 1 45h e 76 module part number 0 0 1 1 0 0 0 1 31h 1 77 module part number 0 0 1 1 0 0 0 0 30h 0 78 module part number 0 1 0 1 0 1 0 1 55h u 79 module part number 0 1 0 0 0 1 0 1 45h e 80 module part number 0 0 1 1 1 0 0 0 38h 8 81 module part number 0 1 0 0 0 0 0 1 41h a 82 module part number 0 1 0 0 0 0 1 1 43h c 83 module part number 0 1 0 0 0 1 1 0 46h f 84 module part number 0 1 0 0 0 0 0 1 41h a 85 module part number 0 0 1 0 1 1 0 1 2dh ? 86 module part number -8e, -8g 0 0 1 1 1 0 0 0 38h 8 -6e 0 0 1 1 0 1 1 0 36h 6 87 module part number -8e, -6e 0 1 0 0 0 1 0 1 45h e -8g 0 1 0 0 0 1 1 1 47h g 88 module part number 0 0 1 0 1 1 0 1 2dh ? 89 module part number 0 1 0 0 0 1 0 1 45h e 90 module part number 0 0 1 0 0 0 0 0 20h (space) 91 revision code 0 0 1 1 0 0 0 0 30h initial 92 revision code 0 0 1 0 0 0 0 0 20h (space) 93 manufacturing date year code (bcd) 94 manufacturing date week code (bcd) 95 to 98 module serial number 99 to 127 manufacture specific data note: these specifications are defined bas ed on component specific ation, not module.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 8 block diagram r s1 dm3 dqs3 r s1 dm0 ba0 to ba2: sdrams (d0 to d7) a0 to a13: sdrams (d0 to d7) ba0 to ba2 /ras: sdrams (d0 to d7) cke0 cke: sdrams (d0 to d7) odt0 odt:sdrams (d0 to d7) vddspd spd vref sdrams (d0 to d7) vdd sdrams (d0 to d7) vss sdrams (d0 to d7) serial pd sda a0 a1 a2 wp scl sa0 sa1 sa2 sda scl notes : 1. dq wiring maybe changed within a byte. 2. dq, dqs, /dqs, odt, dm, cke, /cs relationships must be meintained as shown. 3. refer to the appropriate clock wiring topology under the dimm wiring details section of this document. /dqs0 dq0 to dq7 8 d1 /ras /cas /we a0 to a13 /cas: sdrams (d0 to d7) /we: sdrams (d0 to d7) /cs0 d5 d4 /cs dqs dm dq0 to dq7 r s1 r s1 r s1 r s1 dm4 /dqs4 dqs0 r s1 r s1 dqs4 r s1 r s1 dq8 to dq15 8 r s1 dq32 to dq39 8 r s1 dq40 to dq47 8 r s1 dq16 to dq23 8 d3 d6 d7 r s1 dq24 to dq31 8 r s1 dm5 dqs5 r s1 /dqs5 r s1 r s1 dm6 dqs6 r s1 r s1 dm7 dqs7 r s1 /dqs3 r s1 /dqs7 r s1 dm1 dqs1 r s1 /dqs1 r s1 r s1 dm2 dqs2 r s1 r s1 /dqs6 r s1 /dqs2 r s1 r s2 r s2 r s2 r s2 r s2 dq48 to dq55 8 r s1 dq56 to dq63 8 r s1 d2 * d0 to d7 : 1g bits ddr2 sdram u0 : 2k bits eeprom rs1 : 22 rs2 : 10 /cs dqs dm /cs dqs /dqs /dqs /dqs /dqs /dqs /dqs /dqs dm /cs dqs dm dq0 to dq7 /cs dqs dm dq0 to dq7 /cs dqs dm dq0 to dq7 /cs dqs dm dq0 to dq7 dq0 to dq7 dq0 to dq7 d0 /cs dqs dm dq0 to dq7 /dqs u0
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 9 logical clock net structure r = 200 r = 200 r = 200 dram 3dram loads (ck1 and /ck1, ck2 and /ck2) dimm connector c1 c1 dram c1 dram r = 200 r = 200 r = 200 dram 2dram loads (ck0 and /ck0) dimm connector c1 c1 c2 dram * c1: 1pf c2: 2pf
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 10 electrical specifications ? all voltages are referenced to vss (gnd). absolute maximum ratings parameter symbol value unit notes voltage on any pin relative to vss vt ?0.5 to +2.3 v 1 supply voltage relative to vss vdd ?0.5 to +2.3 v short circuit output current ios 50 ma 1 power dissipation pd 8 w operating case temperature tc 0 to +95 c 1, 2 storage temperature tstg ?55 to +100 c 1 notes: 1. ddr2 sdram co mponent specification. 2. supporting 0 c to +85c and being able to extend to +95c with doubling auto-refresh commands in frequency to a 32ms period (trefi = 3.9 s) and higher temperature self-refresh entry via the control of emrs (2) bit a7 is required. caution exposing the device to stress above those listed in absolute maximum ratings could cause permanent damage. the device is not meant to be operated under conditions outside the limits described in the operational section of this sp ecification exposure to absolute maximum rating conditions for extended periods may affect device reliability. dc operating conditions (tc = 0c to +85 c) (ddr2 sdram component specification) parameter symbol min. typ. max. unit notes supply voltage vdd, vddq 1.7 1.8 1.9 v 4 vss 0 0 0 v vddspd 1.7 ? 3.6 v input reference voltage vref 0.49 vddq 0.50 vddq 0.51 vddq v 1, 2 termination voltage vtt vref ? 0.04 vref vref + 0.04 v 3 dc input logic high vih (dc) vref + 0.125 ? vddq + 0.3 v dc input low vil (dc) ? 0.3 ? vref ? 0.125 v ac input logic high vih (ac) vref + 0.200 ? ? v ac input low vil (ac) ? ? vref ? 0.200 v notes: 1. the value of vref may be selected by the user to provide optimum noise margin in the system. typically the value of vref is expected to be about 0.5 vddq of the transmitting device and vref are expected to track variations in vddq. 2. peak to peak ac noise on vref may not exceed 2% vref (dc). 3. vtt of transmitting device must track vref of receiving device. 4. vddq must be equal to vdd.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 11 ac overshoot/undershoot specification (ddr2 sdram component specification) parameter pins specification unit maximum peak amplitude allowed for overshoot command, address, cke, odt 0.5 v maximum peak amplitude allowed for undershoot 0.5 v maximum overshoot area above vdd ddr2-800 0.66 v-ns ddr2-667 0.8 v-ns maximum undershoot area below vss ddr2-800 0.66 v-ns ddr2-667 0.8 v-ns maximum peak amplitude allowed for overshoot ck, /ck 0.5 v maximum peak amplitude allowed for undershoot 0.5 v maximum overshoot area above vdd 0.23 v-ns maximum undershoot area below vss 0.23 v-ns maximum peak amplitude allowed for overshoot dq, dqs, /dqs, 0.5 v maximum peak amplitude allowed for undershoot udqs, /udqs, ldqs, /ldqs, 0.5 v maximum overshoot area above vddq rdqs, /rdqs, dm, udm, ldm 0.23 v-ns maximum undershoot area below vssq 0.23 v-ns maximum amplitude overshoot area undershoot area volts (v) time (ns) vdd, vddq vss, vssq overshoot/undershoot definition
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 12 dc characteristics 1 (tc = 0c to + 85c, vdd = 1.8v 0.1v, vss = 0v) parameter symbol grade max. unit test condition operating current (act-pre) (another rank is in idd2p) idd0 -8e, -8g -6e 680 640 ma one bank; tck = tck (idd), trc = trc (idd), tras = tras min.(idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data bus inputs are switching operating current (act-read-pre) (another rank is in idd2p) idd1 -8e, -8g -6e 800 760 ma one bank; iout = 0ma; bl = 4, cl = cl(idd), al = 0; tck = tck (idd), trc = trc (idd), tras = tras min.(idd); trcd = trcd (idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data pattern is same as idd4w precharge power-down standby current idd2p 80 ma all banks idle; tck = tck (idd); cke is l; other control and address bus inputs are stable; data bus inputs are floating precharge quiet standby current idd2q -8e, -8g -6e 280 240 ma all banks idle; tck = tck (idd); cke is h, /cs is h; other control and address bus inputs are stable; data bus inputs are floating idle standby current idd2n -8e, -8g -6e 320 280 ma all banks idle; tck = tck (idd); cke is h, /cs is h; other control and address bus inputs are switching; data bus inputs are switching idd3p-f 280 ma fast pdn exit mrs(12) = 0 active power-down standby current idd3p-s 160 ma all banks open; tck = tck (idd); cke is l; other control and address bus inputs are stable; data bus inputs are floating slow pdn exit mrs(12) = 1 active standby current idd3n -8e, -8g -6e 720 640 ma all banks open; tck = tck (idd), tras = tras max.(idd), trp = trp (idd); cke is h, /cs is h between valid commands; other control and address bus inputs are switching; data bus inputs are switching operating current (burst read operating) (another rank is in idd2p) idd4r -8e, -8g -6e 1280 1120 ma all banks open, continuous burst reads, iout = 0ma; bl = 4, cl = cl(idd), al = 0; tck = tck (idd), tras = tras max.(idd), trp = trp (idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data pattern is same as idd4w operating current (burst write operating) (another rank is in idd2p) idd4w -8e, -8g -6e 1280 1120 ma all banks open, continuous burst writes; bl = 4, cl = cl(idd), al = 0; tck = tck (idd), tras = tras max.(idd), trp = trp (idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data bus inputs are switching
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 13 parameter symbol grade max. unit test condition auto-refresh current (another rank is in idd2p) idd5 -8e, -8g -6e 2320 2240 ma tck = tck (idd); refresh command at every trfc (idd) interval; cke is h, /cs is h between valid commands; other control and address bus inputs are switching; data bus inputs are switching self-refresh current idd6 80 ma self refresh mode; ck and /ck at 0v; cke 0.2v; other control and address bus inputs are floating; data bus inputs are floating operating current (bank interleaving) (another rank is in idd2p) idd7 -8e, -8g -6e 2320 2200 ma all bank interleaving reads, iout = 0ma; bl = 4, cl = cl(idd), al = trcd (idd) ? 1 tck (idd); tck = tck (idd), trc = trc (idd), trrd = trrd(idd), tfaw = tfaw (idd), trcd = 1 tck (idd); cke is h, /cs is h between valid commands; address bus inputs are stable during deselects; data pattern is same as idd4w; notes: 1. idd specificati ons are tested after the device is properly initialized. 2. input slew rate is specifie d by ac input test condition. 3. idd parameters are spec ified with odt disabled. 4. data bus consists of dq, dm, dqs, /dqs, rdqs and /rdqs. idd values must be met with all combinations of emrs bits 10 and 11. 5. definitions for idd l is defined as vin vil (ac) (max.) h is defined as vin vih (ac) (min.) stable is defined as inputs stable at an h or l level floating is defined as inputs at vref = vddq/2 switching is defined as: inputs changing between h and l every other clock cycle (once per two clocks) for address and control signals, and inputs changing between h and l every othe r data transfer (once per clock) for dq signals not including masks or strobes. 6. refer to ac timing for idd test conditions. ac timing for idd test conditions for purposes of idd testing, the foll owing parameters are to be utilized. ddr2-800 ddr2-800 ddr2-667 parameter 5-5-5 6-6-6 5-5-5 unit cl (idd) 5 6 5 tck trcd (idd) 12.5 15 15 ns trc (idd) 57.5 60 60 ns trrd (idd) 7.5 7.5 7.5 ns tfaw (idd) 35 35 37.5 ns tck (idd) 2.5 2.5 3 ns tras (min.)(idd) 45 45 45 ns tras (max.)(idd) 70000 70000 70000 ns trp (idd) 12.5 15 15 ns trfc (idd) 127.5 127.5 127.5 ns
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 14 dc characteristics 2 (tc = 0c to +85 c, vdd, vddq = 1.8v 0.1v) (ddr2 sdram component specification) parameter symbol value unit notes input leakage current ? ili ? 2 a vdd vin vss output leakage current ? ilo ? 5 a vddq vout vss minimum required output pull-up under ac test load voh vtt + 0.603 v 5 maximum required output pull-down under ac test load vol vtt ? 0.603 v 5 output timing measurement reference level votr 0.5 vddq v 1 output minimum sink dc current iol +13.4 ma 3, 4, 5 output minimum source dc current ioh ? 13.4 ma 2, 4, 5 notes: 1. the vddq of the dev ice under test is referenced. 2. vddq = 1.7v; vout = 1.42v. 3. vddq = 1.7v; vout = 0.28v. 4. the dc value of vref applied to the receiving device is expected to be set to vtt. 5. after ocd calibration to 18 at tc = 25 c, vdd = vddq = 1.8v. dc characteristics 3 (tc = 0c to +85 c, vdd, vddq = 1.8v 0.1v) (ddr2 sdram component specification) parameter symbol min. max. unit notes ac differential input voltage vid (ac) 0.5 vddq + 0.6 v 1, 2 ac differential cross point voltage vix (ac) 0.5 vddq ? 0.175 0.5 vddq + 0.175 v 2 ac differential cross point voltage vox (ac) 0.5 vddq ? 0.125 0.5 vddq + 0.125 v 3 notes: 1. vid (ac) specifies the input differential voltage |vtr -vcp| required for switching, where vtr is the true input signal (such as ck, dqs, rdqs) and vcp is th e complementary input signal (such as /ck, /dqs, /rdqs). the minimum value is equal to vih (ac) ? vil (ac). 2. the typical value of vix (a c) is expected to be about 0.5 vddq of the transmitting device and vix (ac) is expected to track variations in vddq. vix (ac) i ndicates the voltage at which differential input signals must cross. 3. the typical value of vox (ac) is expected to be about 0.5 vddq of the transmitting device and vox (ac) is expected to track variations in vddq. vox (ac) indicates the vo ltage at which differential output signals must cross. crossing point vssq vtr vcp vid vix or vox vddq differential signal levels* 1, 2
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 15 odt dc electrical characteristics (tc = 0c to +85 c, vdd, vddq = 1.8v 0.1v) (ddr2 sdram component specification) parameter symbol min. typ. max. unit note rtt effective impedance value for emrs (a6, a2) = 0, 1 ; 75 rtt1(eff) 60 75 90 1 rtt effective impedance value for emrs (a6, a2) = 1, 0 ; 150 rtt2(eff) 120 150 180 1 rtt effective impedance value for emrs (a6, a2) = 1, 1 ; 50 rtt3(eff) 40 50 60 1 deviation of vm with respect to vddq/2 vm ? 6 ? + 6 % 1 note: 1. test condition for rtt measurements. measurement definition for rtt (eff) apply vih (ac) and vil (ac) to test pin separately, then measure current i(vih (ac)) and i(vil (ac)) respectively. vih (ac), and vddq values defined in sstl _ 18. )) ( ( )) ( ( ) ( ) ( ) ( ac vil i ac vih i ac vil ac vih eff rtt ? ? = measurement definition for vm measure voltage (vm) at test pin (midpoint) with no load. 100 1 2 ? ? ? ? ? ? ? = vddq vm vm ocd default characteristics (tc = 0c to +85 c, vdd, vddq = 1.8v 0.1v) (ddr2 sdram component specification) parameter min. typ. max. unit notes output impedance 12.6 18 23.4 1, 5 pull-up and pull-down mismatch 0 ? 4 1, 2 output slew rate 1.5 ? 5 v/ns 3, 4 notes: 1. impedance measurement condition for output source dc current: vddq = 1.7v; vout = 1420mv; (vout ? vddq)/ioh must be less than 23.4 for values of vout between vddq and vddq ? 280mv. impedance measurement condition for output si nk dc current: vddq = 1.7v; vout = 280mv; vout/iol must be less than 23.4 for values of vout between 0v and 280mv. 2. mismatch is absolute value between pull up and pull down, both are measured at same temperature and voltage. 3. slew rate measured from vil(ac) to vih(ac). 4. the absolute value of the slew rate as measured from dc to dc is equal to or greater than the slew rate as measured from ac to ac. this is guaranteed by design and characterization. 5. dram i/o specifications for timing, voltage, and slew rate are no lo nger applicable if ocd is changed from default settings.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 16 pin capacitance (ta = 25c, vdd = 1.8v 0.1v) (ddr2 sdram component specification) parameter symbol pins min. max. unit notes clk input pin capacitance cck ck, /ck 1.0 2.0 pf 1 input pin capacitance -8e, -8g 1.0 1.75 pf 1 -6e cin /ras, /cas, /we, /cs, cke, odt, address 1.0 2.0 pf 1 input/output pin capacitance ci/o dq, dqs, /dqs, udqs, /udqs, ldqs, /ldqs, rdqs, /rdqs, dm, udm, ldm 2.5 3.5 pf 2 notes: 1. matching within 0.25pf. 2. matching within 0.50pf.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 17 ac characteristics (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v, vss, vssq = 0v) (ddr2 sdram component specification) ? new units tck(avg) and nck, are in troduced in ddr2-800 and ddr2-667 tck(avg): actual tck(avg) of the input clock under operation. nck: one clock cycle of the input cl ock, counting the actual clock edges. -8e, -8g -6e frequency (mbps) 800 667 parameter symbol min. max. min. max. unit notes /cas latency cl 5 (-8e) 6 (-8g) 5 (-8e) 6 (-8g) 5 5 nck active to read or write command delay trcd 12.5 (-8e) 15 (-8g) ? 15 ? ns precharge command period trp 12.5 (-8e) 15 (-8g) ? 15 ? ns active to active/auto-refresh command time trc 57.5(-8e) 60 (-8g) ? 60 ? ns dq output access time from ck, /ck tac ? 400 + 400 ? 450 +450 ps 10 dqs output access time from ck, /ck tdqsck ? 350 + 350 ? 400 +400 ps 10 ck high-level width tch (avg) 0.48 0.52 0.48 0.52 tck (avg) 13 ck low-level width tcl(avg) 0.48 0.52 0.48 0.52 tck (avg) 13 ck half period thp min. (tcl(abs), tch(abs)) ? min.(tcl(abs), tch(abs)) ? ps 6, 13 clock cycle time tck (avg) 2500 8000 3000 8000 ps 13 dq and dm input hold time tdh (base) 125 ? 175 ? ps 5 dq and dm input setup time tds (base) 50 ? 100 ? ps 4 control and address input pulse width for each input tipw 0.6 ? 0.6 ? tck (avg) dq and dm input pulse width for each input tdipw 0.35 ? 0.35 ? tck (avg) data-out high-impedance time from ck,/ck thz ? tac max. ? tac max. ps 10 dqs, /dqs low-impedance time from ck,/ck tlz (dqs) tac min. tac max. tac min. tac max. ps 10 dq low-impedance time from ck,/ck tlz (dq) 2 tac min. tac max. 2 tac min. tac max. ps 10 dqs-dq skew for dqs and associated dq signals tdqsq ? 200 ? 240 ps dq hold skew factor tqhs ? 300 ? 340 ps 7 dq/dqs output hold time from dqs tqh thp ? tqhs ? thp ? tqhs ? ps 8 dqs latching rising transitions to associated clock edges tdqss ? 0.25 + 0.25 ? 0.25 + 0.25 tck (avg) dqs input high pulse width tdqsh 0.35 ? 0.35 ? tck (avg) dqs input low pulse width tdqsl 0.35 ? 0.35 ? tck (avg) dqs falling edge to ck setup time tdss 0.2 ? 0.2 ? tck (avg) dqs falling edge hold time from ck tdsh 0.2 ? 0.2 ? tck (avg) mode register set command cycle time tmrd 2 ? 2 ? nck write postamble twpst 0.4 0.6 0.4 0.6 tck (avg) write preamble twpre 0.35 ? 0.35 ? tck (avg) address and control input hold time tih (base) 250 ? 275 ? ps 5 address and control input setup time tis (base) 175 ? 200 ? ps 4 read preamble trpre 0.9 1.1 0.9 1.1 tck (avg) 11 read postamble trpst 0.4 0.6 0.4 0.6 tck (avg) 12
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 18 -8e, -8g -6e frequency (mbps) 800 667 parameter symbol min. max. min. max. unit notes active to precharge command tras 45 70000 45 70000 ns active to auto-precharge delay trap trcd min. ? trcd min. ? ns active bank a to active bank b command period trrd 7.5 ? 7.5 ? ns four active window period tfaw 35 ? 37.5 ? ns /cas to /cas command delay tccd 2 ? 2 ? nck write recovery time twr 15 ? 15 ? ns auto precharge write recovery + precharge time tdal wr + ru (trp/tck(avg)) ? wr + ru (trp/tck(avg)) ? nck 1, 9 internal write to read command delay twtr 7.5 ? 7.5 ? ns internal read to precharge command delay trtp 7.5 ? 7.5 ? ns exit self-refresh to a non-read command txsnr trfc + 10 ? trfc + 10 ? ns exit self-refresh to a read command txsrd 200 ? 200 ? nck exit precharge power down to any non-read command txp 2 ? 2 ? nck exit active power down to read command txard 2 ? 2 ? nck 3 exit active power down to read command (slow exit/low power mode) txards 8 ? al ? 7 ? al ? nck 2, 3 cke minimum pulse width (high and low pulse width) tcke 3 ? 3 ? nck output impedance test driver delay toit 0 12 0 12 ns mrs command to odt update delay t mod 0 12 0 12 ns auto-refresh to active/auto-refresh command time trfc 127.5 ? 127.5 ? ns average periodic refresh interval (0 c tc +85 c) trefi ? 7.8 ? 7.8 s (+85 c < tc +95 c) trefi ? 3.9 ? 3.9 s minimum time clocks remains on after cke asynchronously drops low tdelay tis + tck(avg) + tih ? tis + tck(avg) + tih ? ns notes: 1. for each of the terms above, if not alr eady an integer, round to the next higher integer. 2. al: additive latency. 3. mrs a12 bit defines which active power down exit timing to be applied. 4. the figures of input waveform timing 1 and 2 are referenced from the input signal crossing at the vih(ac) level for a rising signal and vil(ac) for a falling signal applied to the device under test. 5. the figures of input waveform timing 1 and 2 are referenced from the input signal crossing at the vil(dc) level for a rising signal and vih(dc) for a falling signal applied to the device under test. dqs /dqs tds tdh tds tdh vddq vih (ac)(min.) vih (dc)(min.) vil (dc)(max.) vil (ac)(max.) vss vref ck /ck tis tih tis tih vddq vih (ac)(min.) vih (dc)(min.) vil (dc)(max.) vil (ac)(max.) vss vref input waveform timing 1 (tds, tdh) input waveform timing 2 (tis, tih)
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 19 6. thp is the minimum of the absolu te half period of the actual input cl ock. thp is an input parameter but not an input specification parameter. it is used in conj unction with tqhs to derive the dram output timing tqh. the value to be used for tqh calculation is determined by the following equation; thp = min ( tch(abs), tcl(abs) ), where, tch(abs) is the minimum of the actual instantaneous clock high time; tcl(abs) is the minimum of the actual instantaneous clock low time; 7. tqhs accounts for: a. the pulse duration distortion of on-chip clock ci rcuits, which represents how well the actual thp at the input is transferred to the output; and b. the worst case push-out of dq s on one transition followed by the worst case pull-in of dq on the next transition, both of which are independent of each other, due to data pin skew, output pattern effects, and p-channel to n-channel vari ation of the out put drivers. 8. tqh = thp ? tqhs, where: thp is the minimum of the absolute half period of the actual input clock; and tqhs is the specification value under the max column. {the less half-pulse width distortion present, the larger the tqh value is; and the larger the valid data eye will be.} examples: a. if the system provides thp of 1315ps into a ddr2-667 sdram, the dram provides tqh of 975ps (min.) b. if the system provides thp of 1420ps into a ddr2-667 sdram, the dram provides tqh of 1080ps (min.) 9. ru stands for round up. wr refers to the twr parameter stored in the mrs. 10. when the device is operated with input clock jitter, this parameter needs to be derated by the actual terr(6-10per) of the input clock. (output deratings are relative to the sdram input clock.) for example, if the measured jitter into a ddr2-667 sdram has terr(6-10per) min. = ? 272ps and terr(6-10per) max. = +293ps, then tdqs ck min.(derated) = tdqsck min. ? terr(6-10per) max. = ? 400ps ? 293ps = ? 693ps and tdqsck max.(derated) = tdqsck max. ? terr(6-10per) min. = 400ps + 272ps = +672ps. similarly, tlz(dq) for ddr2-667 derates to tlz(dq) min.(derated) = ? 900ps ? 293ps = ? 1193ps and tlz(dq) max.(derated)= 450ps + 272ps = +722ps. 11. when the device is operated with input clock jitte r, this parameter needs to be derated by the actual tjit(per) of the input clock. (output deratings are relative to the sdram input clock.) for example, if the measured jitter into a ddr2-667 sdram has tjit(per) min. = ? 72ps and tjit(per) max. = +93ps, then trpre min.(derat ed) = trpre min. + tjit(per) min. = 0.9 tck(avg) ? 72ps = +2178ps and trpre max.(derated) = tr pre max. + tjit(per) max. = 1.1 tck(avg) + 93ps = +2843ps. 12. when the device is operated with input clock jitte r, this parameter needs to be derated by the actual tjit(duty) of the input clock. (output deratings are relative to the sdram input clock.) for example, if the measured jitter into a ddr2-667 sdram has tjit(duty) min. = ? 72ps and tjit(duty) max. = +93ps, then trpst min.(der ated) = trpst min. + tjit(duty) min. = 0.4 tck(avg) ? 72ps = +928ps and trpst max.(derated) = trpst max. + tjit(duty) max. = 0.6 tck(avg) + 93ps = +1592ps. 13. refer to the clock jitter table.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 20 odt ac electrical characteristics (ddr2 sdram component specification) parameter symbol min. max. unit notes odt turn-on delay taond 2 2 tck odt turn-on taon tac (min) tac (max) + 700 ps 1, 3 odt turn-on (power down mode) taonpd tac(min) + 2000 2tck + tac(max) + 1000 ps odt turn-off delay taofd 2.5 2.5 tck 5 odt turn-off taof tac(min) tac(max) + 600 ps 2, 4, 5 odt turn-off (power down mode) taofpd tac(min) + 2000 2.5tck + tac(max) + 1000 ps odt to power down entry latency tanpd 3 3 tck odt power down exit latency taxpd 8 8 tck notes: 1. odt turn on time min is when the device le aves high impedance and odt resistance begins to turn on. odt turn on time max is when the odt resistance is fully on. both are measured from taond. 2. odt turn off time min is when the device starts to turn off odt resistance. odt turn off time max is when the bus is in high impedance. both are measured from taofd. 3. when the device is operated with input clock jitter, this parameter needs to be derated by the actual terr(6-10per) of the input clock. (output deratings are relative to the sdram input clock.) 4. when the device is operated with input clo ck jitter, this parameter needs to be derated by { ? tjit(duty) max. ? terr(6-10per) max. } and { ? tjit(duty) min. ? terr(6-10per) min. } of the actual input clock.(output deratings are relati ve to the sdram input clock.) for example, if the measured jitter into a ddr2-667 sdram has terr(6-10per) min. = ? 272ps, terr(6-10per) max. = +293ps, tjit(duty) min. = ? 106ps and tjit(duty) max. = +94ps, then taof min.(derated) = taof min. + { ? tjit(duty) max. ? terr(6-10per) max. } = ? 450ps + { ? 94ps ? 293ps} = ? 837ps and taof max.(derated) = taof max. + { ? tjit(duty) min. ? terr(6-10per) min. } = 1050ps + { 106ps + 272ps} = +1428ps. 5. for taofd of ddr2-667/800, t he 1/2 clock of nck in the 2.5 nck assumes a tch(avg), average input clock high pulse width of 0.5 relative to tck(avg). taof min. and taof max. should each be derated by the same amount as the actual amou nt of tch(avg) offset present at the dram input with respect to 0.5. for example, if an input clock has a worst case tch(av g) of 0.48, the taof min. should be derated by subtracting 0.02 tck(avg) from it, whereas if an input cl ock has a worst case tch(avg) of 0.52, the taof max. should be derated by adding 0.02 tck(avg) to it. therefore, we have; taof min.(derated) = tac min. ? [0.5 ? min.(0.5, tch(avg) min.)] tck(avg) taof max.(derated) = tac max. + 0.6 + [max.(0.5, tch(avg) max.) ? 0.5] tck(avg) or taof min.(derated) = min.(tac min., tac min. ? [0.5 ? tch(avg) min.] tck(avg)) taof max.(derated) = 0.6 + max.(t ac max., tac max. + [tch(avg) max. ? 0.5] tck(avg)) where tch(avg) min. and tch(avg) max. are the minimum and maximum of tch(avg) actually measured at the dram input balls.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 21 ac input test conditions (ddr2 sdram component specification) parameter symbol value unit notes input reference voltage vref 0.5 vddq v 1 input signal maximum peak to peak swing vswing (max.) 1.0 v 1 input signal minimum slew rate slew 1.0 v/ns 2, 3 notes: 1. input waveform timing is referenced to the input signal crossing through the vih/il (ac) level applied to the device under test. 2. the input signal minimum slew rate is to be main tained over the range from vref to vih (ac) (min.) for rising edges and the range from vref to vil (ac) (max.) for falling edges as shown in the below figure. 3. ac timings are referenced with input waveforms switching from vil (ac) to vih (ac) on the positive transitions and vih (ac) to vil (ac) on the negative transitions. vswing(max.) tr tf vref ? vil (ac) (max.) tf falling slew = vddq vih (ac)(min.) vih (dc)(min.) vil (dc)(max.) vil (ac)(max.) vss vref vih (ac) min. ? vref tr rising slew = ac input test signal wave forms vtt measurement point dq rt =25 output load
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 22 clock jitter [ddr2-800, 667] -8e, -8g -6e frequency (mbps) 800 667 parameter symbol min. max. min. max. unit notes average clock period tck (avg) 2500 8000 3000 8000 ps 1 clock period jitter tjit (per) ? 100 100 ? 125 125 ps 5 clock period jitter during dll locking period tjit (per, lck) ? 80 80 ? 100 100 ps 5 cycle to cycle period jitter tjit (cc) ? 200 ? 250 ps 6 cycle to cycle clock period jitter during dll locking period tjit (cc, lck) ? 160 ? 200 ps 6 cumulative error across 2 cycles terr (2per) ? 150 150 ? 175 175 ps 7 cumulative error across 3 cycles terr (3per) ? 175 175 ? 225 225 ps 7 cumulative error across 4 cycles terr (4per) ? 200 200 ? 250 250 ps 7 cumulative error across 5 cycles terr (5per) ? 200 200 ? 250 250 ps 7 cumulative error across n=6,7,8,9,10 cycles terr (6-10per) ? 300 300 ? 350 350 ps 7 cumulative error across n=11, 12,?49,50 cycles terr (11-50per) ? 450 450 ? 450 450 ps 7 average high pulse width tch (avg) 0.48 0.52 0.48 0.52 tck (avg) 2 average low pulse width tcl (avg) 0.48 0.52 0.48 0.52 tck (avg) 3 duty cycle jitter tjit (duty) ? 100 100 ? 125 125 ps 4 notes: 1. tck (avg) is calculated as the average clock period across any consecutive 200cycle window. n tckj avg tck n j ? ? ? ? ? ? = = 1 ) ( n = 200 2. tch (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high pulses. )) ( ( ) ( 1 avg tck n tchj avg tch n j ? ? ? ? ? ? = = n = 200 3. tcl (avg) is defined as the average low pulse widt h, as calculated across any consecutive 200 low pulses. )) ( ( ) ( 1 avg tck n tclj avg tcl n j ? ? ? ? ? ? = = n = 200 4. tjit (duty) is defined as the cumulative set of tch jitter and tcl jitter. tch jitter is the largest deviation of any single tch from tch (avg). tcl jitter is the largest deviation of any single tcl from tcl (avg). tjit (duty) is not subject to production test. tjit (duty) = min./max. of {tjit (ch), tjit (cl)}, where: tjit (ch) = {tch j - tch (avg) where j = 1 to 200} tjit (cl) = {tcl j ? tcl (avg) where j = 1 to 200} 5. tjit (per) is defined as the largest dev iation of any single tck from tck (avg). tjit (per) = min./max. of { tck j ? tck (avg) where j = 1 to 200} tjit (per) defines the single period jitter when the dll is already locked. tjit (per, lck) uses the same definition for single period jitter, during the dll locking period only. tjit (per) and tjit (per, lck) are not subject to production test.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 23 6. tjit (cc) is defined as the abs olute difference in clock period between two consecutive clock cycles: tjit (cc) = max. of |tck j+1 ? tck j | tjit (cc) is defines the cycle to cycle jitter when the dll is already locked. tjit (cc, lck) uses the same definition for cycle to cycle jitter, during the dll lockin g period only. tjit (cc) and tjit (cc, lck) are not subject to production test. 7. terr (nper) is defined as the cumulative error ac ross multiple consecutive cycles from tck (avg). terr (nper) is not subject to production test. )) ( ) ( 1 avg tck n tckj nper terr n j ? ? ? ? ? ? ? = = 2 n 50 for terr (nper) 8. these parameters are specified per their average values, however it is understood that the following relationship between the average timing and the abs olute instantaneous timing hold at all times. (minimum and maximum of spec values are to be used for calculations in the table below.) parameter symbol min. max. unit absolute clock period tck (abs) tck (avg) min. + tjit (per) min. tck (avg) max. + tjit (per) max. ps absolute clock high pulse width tch (abs) tch (avg) min. tck (avg) min. + tjit (duty) min. tch (avg) max. tck (avg) max. + tjit (duty) max. ps absolute clock low pulse width tcl (abs) tcl (avg) min. tck (avg) min. + tjit (duty) min. tcl (avg) max. tck (avg) max. + tjit (duty) max. ps example: for ddr2-667, tch(abs) min. = ( 0.48 3000 ps ) - 125ps = 1315ps
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 24 pin functions ck, /ck (input pin) the ck and the /ck are the master clock inputs. all in puts except dms, dqss and dqs are referred to the cross point of the ck rising edge and the vref level. when a read operation, dqss and dqs are referred to the cross point of the ck and the /ck. when a write operation, dms and dqs are referr ed to the cross point of the dqs and the vref level. dqss for write operation are refe rred to the cross point of the ck and the /ck. /cs (input pin) when /cs is low, commands and data can be input. when /cs is high, all inputs are ignored. however, internal operations (bank active, burst operations, etc.) are held. /ras, /cas, and /we (input pins) these pins define operating commands (re ad, write, etc.) depending on the comb inations of their voltage levels. see "command operation". a0 to a13 (input pins) row address (ax0 to ax13) is determined by the a0 to the a 13 level at the cross point of the ck rising edge and the vref level in a bank active command cycle. column addre ss (ay0 to ay9) is loaded via the a0 to the a9 at the cross point of the ck rising edge and the vref level in a read or a write command cycle. this column address becomes the starting addre ss of a burst operation. a10 (ap) (input pin) a10 defines the precharge mode when a precharge command, a read command or a write command is issued. if a10 = high when a precharge command is issued, all banks are precharged. if a10 = low when a precharge command is issued, only the bank that is selected by ba 1, ba0 is precharged. if a10 = high when read or write command, auto-precharge function is enabled. while a10 = low, auto-precharge function is disabled. ba0, ba1, ba2 (input pin) ba0, ba1 and ba2 are bank select signals (ba). the memory array is divided into 8 banks : bank 0 to bank 7. (see bank select signal table) [bank select signal table] ba0 ba1 ba2 bank 0 l l l bank 1 h l l bank 2 l h l bank 3 h h l bank 4 l l h bank 5 h l h bank 6 l h h bank 7 h h h remark: h: vih. l: vil. cke (input pin) cke controls power down and self-refresh. the powe r down and the self-refresh commands are entered when the cke is driven low and exited when it resumes to high. the cke level must be kept for 1 ck cycle at least, that is , if cke changes at the cross point of the ck rising edge and the vref level with proper setup time tis, at the next ck rising edge cke level must be kept with proper hold time tih. dq (input and output pins) data are input to and output from these pins.
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 25 dqs and /dqs (input and output pin) dqs and /dqs provide the read data strobes (as output) and the write data strobes (as input). dm (input pins) dm is the reference signal of the dat a input mask function. dms are sampl ed at the cross point of dqs and /dqs. vdd (power supply pins) 1.8v is applied. (vdd is for the internal circuit.) vddspd (power supply pin) 1.8v is applied (for serial eeprom). vss (power supply pin) ground is connected. detailed operation part and timing waveforms refer to the ede1104acse, ede1108acse, ede1116acse datasheet (e0975e).
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 26 physical outline detail a 0.20 0.15 2.50 0.20 1.00 133.35 (datum -a-) 63.00 55.00 a b 1 120 240 121 full r 0.80 0.05 unit: mm 1.27 0.10 3.00 4.00 min 10.00 4.00 17.80 30.00 3.18 max 0.5 min component area (front) 5.00 detail b 3.80 1.50 0.10 2.50 4.00 full r (datum -a-) eca-ts2-0126-02 (back)
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 27 caution for handling memory modules when handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ics, chip capacitors and chip resistors. it is necessary to avoid undue mechanical stress on these components to prevent damaging them. in particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. when re-packing memory modules, be sure the modules are not touching each other. modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. mde0202 notes for cmos devices 1 precaution against esd for mos devices exposing the mos devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the mos devices operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. environmental control must be adequate. when it is dry, humidifier should be used. it is recommended to avoid using insulators that easily build static electricity. mos devices must be stored and transported in an anti-static container, static shielding bag or conductive material. all test and measurement tools including work bench and floor should be grounded. the operator should be grounded using wrist strap. mos devices must not be touched with bare hands. similar precautions need to be taken for pw boards with semiconductor mos devices on it. 2 handling of unused input pins for cmos devices no connection for cmos devices input pins can be a cause of malfunction. if no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. cmos devices behave differently than bipolar or nmos devices. input levels of cmos devices must be fixed high or low by using a pull-up or pull-down circuitry. each unused pin should be connected to v dd or gnd with a resistor, if it is considered to have a possibility of being an output pin. the unused pins must be handled in accordance with the related specifications. 3 status before initialization of mos devices power-on does not necessarily define initial status of mos devices. production process of mos does not define the initial operation status of the device. immediately after the power source is turned on, the mos devices with reset function have not yet been initialized. hence, power-on does not guarantee output pin levels, i/o settings or contents of registers. mos devices are not initialized until the reset signal is received. reset operation must be executed immediately after power-on for mos devices having reset function. cme0107
ebe10ue8acfa preliminary data sheet e1058e10 (ver. 1.0) 28 m01e0706 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of elpida memory, inc. elpida memory, inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of elpida memory, inc. or third parties by or arising from the use of the products or information listed in this document. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of elpida memory, inc. or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. elpida memory, inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [product applications] be aware that this product is for use in typical electronic equipment for general-purpose applications. elpida memory, inc. makes every attempt to ensure that its products are of high quality and reliability. however, users are instructed to contact elpida memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [product usage] design your application so that the product is used within the ranges and conditions guaranteed by elpida memory, inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. elpida memory, inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating elpida memory, inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the elpida memory, inc. product. [usage environment] usage in environments with special characteristics as listed below was not considered in the design. accordingly, our company assumes no responsibility for loss of a customer or a third party when used in environments with the special characteristics listed below. example: 1) usage in liquids, including water, oils, chemicals and organic solvents. 2) usage in exposure to direct sunlight or the outdoors, or in dusty places. 3) usage involving exposure to significant amounts of corrosive gas, including sea air, cl 2 , h 2 s, nh 3 , so 2 , and no x . 4) usage in environments with static electricity, or strong electromagnetic waves or radiation. 5) usage in places where dew forms. 6) usage in environments with mechanical vibration, impact, or stress. 7) usage near heating elements, igniters, or flammable items. if you export the products or technology described in this document that are controlled by the foreign exchange and foreign trade law of japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of japan. also, if you export products/technology controlled by u.s. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. if these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. the information in this document is subject to change without notice. before using this document, confirm that this is the late st version.

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